Comparative Study of 4H-SiC DMOSFETs with N~2O Thermal Oxide and Deposit Oxide with Post Oxidation Anneal

Yen, C.T. / Hung, C.C. / Mikhaylov, A. et al. | British Library Online Contents | 2014

Interfacial sub-oxide regions at Si-SiO~2 interfaces: minimization by post-oxidation rapid thermal anneal

Lucovsky, G. / Koh, K. / Chaflin, B. et al. | British Library Online Contents | 1998

Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation Anneal

Shibagaki, M. / Kurematsu, Y. / Watanabe, F. et al. | British Library Online Contents | 2005

Effects of the post nitridation anneal temperature on performances of the nano MOSFET with ultra-thin (<2.5nm) plasma nitrided gate dielectric

Chiu, H. Y. / Fang, Y. K. / Juang, F. R. | British Library Online Contents | 2012

Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

Fujihira, K. / Tarui, Y. / Ohtsuka, K. I. et al. | British Library Online Contents | 2005