Effects of the post nitridation anneal temperature on performances of the nano MOSFET with ultra-thin (<2.5nm) plasma nitrided gate dielectric: Fid-Bau Portal

Effects of the post nitridation anneal temperature on performances of the nano MOSFET with ultra-thin (<2.5nm) plasma nitrided gate dielectric

Chiu, H. Y. / Fang, Y. K. / Juang, F. R.

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Effects of the post nitridation anneal temperature on performances of the nano MOSFET with ultra-thin (<2.5nm) plasma nitrided gate dielectric

Chiu, H. Y. / Fang, Y. K. / Juang, F. R.

Effects of the post nitridation anneal temperature on performances of the nano MOSFET with ultra-thin (<2.5nm) plasma nitrided gate dielectric

Chiu, H. Y. / Fang, Y. K. / Juang, F. R.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Effects of the post nitridation anneal temperature on performances of the nano MOSFET with ultra-thin (<2.5nm) plasma nitrided gate dielectric

Contributors:

Chiu, H. Y. (author) / Fang, Y. K. (author) / Juang, F. R. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 15 ; 27-31

Publication date:

2012-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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