Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability: Fid-Bau Portal

Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

Fujihira, K. / Tarui, Y. / Ohtsuka, K. I. / Imaizumi, M. / Takami, T.

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Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

Fujihira, K. / Tarui, Y. / Ohtsuka, K. I. / Imaizumi, M. / Takami, T.

Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

Fujihira, K. / Tarui, Y. / Ohtsuka, K. I. / Imaizumi, M. / Takami, T.

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Title:

Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability

Contributors:

Fujihira, K. (author) / Tarui, Y. (author) / Ohtsuka, K. I. (author) / Imaizumi, M. (author) / Takami, T. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 697-700

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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