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Gettering phenomenon of oxidation-induced stacking-faults in silicon-on-insulator structure by wafer-direct-bonding method
Gettering phenomenon of oxidation-induced stacking-faults in silicon-on-insulator structure by wafer-direct-bonding method
Gettering phenomenon of oxidation-induced stacking-faults in silicon-on-insulator structure by wafer-direct-bonding method
Kim, K.-T. (author) / Choi, D.-J. (author)
JOURNAL OF MATERIALS SCIENCE LETTERS ; 20 ; 245-248
2001-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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