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The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells
The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells
The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells
Jung, M. (author) / Kim, T. W. (author) / Lee, D. U. (author) / Choo, D. C. (author) / Yoo, K. H. (author) / Kim, D. L. (author) / Kim, M. D. (author) / Lim, H. (author)
APPLIED SURFACE SCIENCE ; 177 ; 1-7
2001-01-01
7 pages
Article (Journal)
English
DDC:
621.35
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