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The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells
The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells
The dependence of the carrier density and the mobility on the spacer-layer thickness in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs asymmetric single quantum wells
Jung, M. (Autor:in) / Kim, T. W. (Autor:in) / Lee, D. U. (Autor:in) / Choo, D. C. (Autor:in) / Yoo, K. H. (Autor:in) / Kim, D. L. (Autor:in) / Kim, M. D. (Autor:in) / Lim, H. (Autor:in)
APPLIED SURFACE SCIENCE ; 177 ; 1-7
01.01.2001
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.35
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