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    Atomic arrangements, electronic parameters, and electronic structures in modulation-doped AlxGa1-xAs/InyGa1-yAs/AlxGa1-xAs step quantum wells

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    New search for: Kim, T. W.

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    Atomic arrangements, electronic parameters, and electronic structures in modulation-doped AlxGa1-xAs/InyGa1-yAs/AlxGa1-xAs step quantum wells

    New search for: Jung, M.
    New search for: Kim, T. W.

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    Atomic arrangements, electronic parameters, and electronic structures in modulation-doped AlxGa1-xAs/InyGa1-yAs/AlxGa1-xAs step quantum wells

    New search for: Jung, M.
    New search for: Kim, T. W.

    Access

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    Document information
    Title:

    Atomic arrangements, electronic parameters, and electronic structures in modulation-doped AlxGa1-xAs/InyGa1-yAs/AlxGa1-xAs step quantum wells

    Contributors:

    Jung, M. (author) / Kim, T. W. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 107 ; 176-180

    Publication date:

    2004-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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