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Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer
Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer
Enhancement of the activation energy in modulation-doped AlxGa1-x As/InyGa1-yAs/GaAs quantum wells due to an embedded deep step layer
Choo, D. C. (author) / Kim, T. W. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 113 ; 56-59
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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