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    Dependence of the electronic parameters on the InyGa1-yAs quantum well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

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    New search for: Kim, T. W.
    New search for: Yoo, K. H.

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    Dependence of the electronic parameters on the InyGa1-yAs quantum well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

    New search for: Lee, D. U.
    New search for: Kim, T. W.
    New search for: Yoo, K. H.

    Access

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    Check availability in my library
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    Dependence of the electronic parameters on the InyGa1-yAs quantum well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

    New search for: Lee, D. U.
    New search for: Kim, T. W.
    New search for: Yoo, K. H.

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    Document information
    Title:

    Dependence of the electronic parameters on the InyGa1-yAs quantum well width in modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs strained single quantum wells

    Contributors:

    Lee, D. U. (author) / Kim, T. W. (author) / Yoo, K. H. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 240 ; 375-380

    Publication date:

    2005-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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