Threading dislocations with edge components in GaN epilayers grown on Al~2O~3 substrates: Fid-Bau Portal

Threading dislocations with edge components in GaN epilayers grown on Al~2O~3 substrates

Kang, J. / Ogawa, T.

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Threading dislocations with edge components in GaN epilayers grown on Al~2O~3 substrates

Kang, J. / Ogawa, T.

Threading dislocations with edge components in GaN epilayers grown on Al~2O~3 substrates

Kang, J. / Ogawa, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Threading dislocations with edge components in GaN epilayers grown on Al~2O~3 substrates

Contributors:

Kang, J. (author) / Ogawa, T. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 16 ; 2550-2555

Publication date:

2001-01-01

Size:

6 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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