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    Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO~2/Si multilayer structure

    New search for: Latt, K. M.
    New search for: Sher-Yi, C.
    New search for: Osipowicz, T.
    New search for: Lee, K.
    New search for: Lee, Y. K.

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    Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO~2/Si multilayer structure

    New search for: Latt, K. M.
    New search for: Sher-Yi, C.
    New search for: Osipowicz, T.
    New search for: Lee, K.
    New search for: Lee, Y. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO~2/Si multilayer structure

    New search for: Latt, K. M.
    New search for: Sher-Yi, C.
    New search for: Osipowicz, T.
    New search for: Lee, K.
    New search for: Lee, Y. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO~2/Si multilayer structure

    Contributors:

    Latt, K. M. (author) / Sher-Yi, C. (author) / Osipowicz, T. (author) / Lee, K. (author) / Lee, Y. K. (author)

    Published in:

    JOURNAL OF MATERIALS SCIENCE ; 36 ; 5705-5712

    Publication date:

    2001-01-01

    Size:

    8 pages

    ISSN:

    0022-2461

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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