Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2: Fid-Bau Portal

Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

Lee, Y. K. / Latt, K. M. / JaeHyung, K. / Osipowicz, T. / Sher-Yi, C. / Lee, K.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

Lee, Y. K. / Latt, K. M. / JaeHyung, K. / Osipowicz, T. / Sher-Yi, C. / Lee, K.

Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

Lee, Y. K. / Latt, K. M. / JaeHyung, K. / Osipowicz, T. / Sher-Yi, C. / Lee, K.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Comparative analysis and study of ionized metal plasma (IMP)-Cu and chemical vapor deposition (CVD)-Cu on diffusion barrier properties of IMP-TaN on SiO2

Contributors:

Lee, Y. K. (author) / Latt, K. M. (author) / JaeHyung, K. (author) / Osipowicz, T. (author) / Sher-Yi, C. (author) / Lee, K. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 77 ; 282 - 287

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Lee, Y. K. / Maung Latt, K. / Jaehyung, K. et al. | British Library Online Contents | 2000

Behaviour of ionized metal plasma deposited Ta diffusion barrier between Cu and SiO2

Maung Latt, K. / Park, H. S. / Li, S. et al. | British Library Online Contents | 2002

Structural properties of SiO2 films prepared by plasma-enhanced chemical vapor deposition

Iacona, F. / Ceriola, G. / La Via, F. | British Library Online Contents | 2001

Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO~2/Si multilayer structure

Latt, K. M. / Sher-Yi, C. / Osipowicz, T. et al. | British Library Online Contents | 2001

Study of diffusion barrier properties of ionized metal plasma (IMP) deposited tantalum (Ta) between Cu and SiO"2

Lee, Y.K. / Maung Latt, K. / JaeHyung, K. et al. | British Library Online Contents | 1999