Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation: Fid-Bau Portal

Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Isoird, K. / Ottaviani, L. / Locatelli, M. L. / Planson, D. / Raynaud, C. / Bevilacqua, P. / Chante, J. P.

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Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Isoird, K. / Ottaviani, L. / Locatelli, M. L. / Planson, D. / Raynaud, C. / Bevilacqua, P. / Chante, J. P.

Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Isoird, K. / Ottaviani, L. / Locatelli, M. L. / Planson, D. / Raynaud, C. / Bevilacqua, P. / Chante, J. P.

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Order at Subito €

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Title:

Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation

Contributors:

Isoird, K. (author) / Ottaviani, L. (author) / Locatelli, M. L. (author) / Planson, D. (author) / Raynaud, C. (author) / Bevilacqua, P. (author) / Chante, J. P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 338/342 ; 1363-1366

Publication date:

2000-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Wang, S. R. / Raynaud, C. / Planson, D. et al. | British Library Online Contents | 2003

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Design, Fabrication and Characterization of 5 kV 4H-SiC p^+n Planar Bipolar Diodes Protected by Junction Termination Extension

Raynaud, C. / Lazar, M. / Planson, D. et al. | British Library Online Contents | 2004