Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization: Fid-Bau Portal

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

Isoird, K. / Lazar, M. / Locatelli, M.-L. / Raynaud, C. / Planson, D. / Chante, J. P.

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Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

Isoird, K. / Lazar, M. / Locatelli, M.-L. / Raynaud, C. / Planson, D. / Chante, J. P.

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

Isoird, K. / Lazar, M. / Locatelli, M.-L. / Raynaud, C. / Planson, D. / Chante, J. P.

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Title:

Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization

Contributors:

Isoird, K. (author) / Lazar, M. (author) / Locatelli, M.-L. (author) / Raynaud, C. (author) / Planson, D. (author) / Chante, J. P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1289-1292

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Wang, S. R. / Raynaud, C. / Planson, D. et al. | British Library Online Contents | 2003

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Isoird, K. / Lazar, M. / Ottaviani, L. et al. | British Library Online Contents | 2001

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