A 70-GHz-fT double-polysilicon SiGe HBT using a non selective epitaxial growth: Fid-Bau Portal

A 70-GHz-fT double-polysilicon SiGe HBT using a non selective epitaxial growth

Baudry, H. / Fellous, C. / Martinet, B. / Romagna, F. / Marty, M. / Mourier, J. / Troillard, G. / Laurens, M. / Monroy, A. / Dutartre, D.

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A 70-GHz-fT double-polysilicon SiGe HBT using a non selective epitaxial growth

Baudry, H. / Fellous, C. / Martinet, B. / Romagna, F. / Marty, M. / Mourier, J. / Troillard, G. / Laurens, M. / Monroy, A. / Dutartre, D.

A 70-GHz-fT double-polysilicon SiGe HBT using a non selective epitaxial growth

Baudry, H. / Fellous, C. / Martinet, B. / Romagna, F. / Marty, M. / Mourier, J. / Troillard, G. / Laurens, M. / Monroy, A. / Dutartre, D.

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Title:

A 70-GHz-fT double-polysilicon SiGe HBT using a non selective epitaxial growth

Contributors:

Baudry, H. (author) / Fellous, C. (author) / Martinet, B. (author) / Romagna, F. (author) / Marty, M. (author) / Mourier, J. (author) / Troillard, G. (author) / Laurens, M. (author) / Monroy, A. (author) / Dutartre, D. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 21 - 25

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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