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Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments
Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments
Enhanced relaxation of SiGe layers by He implantation supported by in situ ultrasonic treatments
Romanjuk, B. (author) / Kladko, V. (author) / Melnik, V. (author) / Popov, V. (author) / Yukhymchuk, V. (author) / Gudymenko, A. (author) / Olikh, Y. (author) / Weidner, G. (author) / Kruger, D. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 171-175
2005-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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