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Selective SiGe epitaxy by rtcvd for new device architectures

Ribot, P. / Monfray, S. / Skotnicki, T. / Dutartre, D.

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Selective SiGe epitaxy by rtcvd for new device architectures

Ribot, P. / Monfray, S. / Skotnicki, T. / Dutartre, D.

Selective SiGe epitaxy by rtcvd for new device architectures

Ribot, P. / Monfray, S. / Skotnicki, T. / Dutartre, D.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Selective SiGe epitaxy by rtcvd for new device architectures

Contributors:

Ribot, P. (author) / Monfray, S. (author) / Skotnicki, T. (author) / Dutartre, D. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 125 - 128

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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