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Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

Li, Jiun-Yun / Sturm, James C. / Majumdar, A. / Lauer, I. / Koester, S.

There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the “excess” defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.

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Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

Li, Jiun-Yun / Sturm, James C. / Majumdar, A. / Lauer, I. / Koester, S.

There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the “excess” defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.

Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

Li, Jiun-Yun / Sturm, James C. / Majumdar, A. / Lauer, I. / Koester, S.

There is great interest in SiGe/Si heterojunction tunnel diodes for novel devices such as sharp subthreshold slope MOSFET's. High tunneling current densities are a clear goal (for MOSFET drive current, e.g.). This work presents two clear results: (i) a direct measurement of the dependences on bandgap (Ge fraction) of the direct tunneling current vs. the “excess” defect-assisted tunneling current, and (ii) the highest direct tunneling currents (NDR current peaks) observed in Si-based heterojunction diodes grown by chemical vapor deposition.

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Title:

Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD

Contributors:

Li, Jiun-Yun (author) / Sturm, James C. (author) / Majumdar, A. (author) / Lauer, I. (author) / Koester, S. (author)

Published in:

2009 Device Research Conference ; 99-100

Publication date:

2009-06-01

Size:

410773 byte

ISBN:

978-1-4244-3528-9 , 978-1-4244-3527-2

ISSN:

DOI:

https://doi.org/10.1109/DRC.2009.5354859

Type of media:

Conference paper

Type of material:

Electronic Resource

Language:

English

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