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    Thermal stability of ultra-shallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping

    New search for: Thompson, P. E.
    New search for: Bennett, J.

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    Thermal stability of ultra-shallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping

    New search for: Thompson, P. E.
    New search for: Bennett, J.

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    Access via TIB
    Check availability in my library
    Order at Subito €

    Thermal stability of ultra-shallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping

    New search for: Thompson, P. E.
    New search for: Bennett, J.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Thermal stability of ultra-shallow junctions in silicon formed by molecular-beam epitaxy using boron delta doping

    Contributors:

    Thompson, P. E. (author) / Bennett, J. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 211 - 215

    Publication date:

    2002-01-01

    Size:

    5 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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