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Application of selective epitaxy for formation of ultra shallow SiGe-based junctions

Hallstedt, J. / Isheden, C. / Ostling, M. / Baubinas, R. / Matukas, J. / Palenskis, V. / Radamson, H. H.

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Application of selective epitaxy for formation of ultra shallow SiGe-based junctions

Hallstedt, J. / Isheden, C. / Ostling, M. / Baubinas, R. / Matukas, J. / Palenskis, V. / Radamson, H. H.

Application of selective epitaxy for formation of ultra shallow SiGe-based junctions

Hallstedt, J. / Isheden, C. / Ostling, M. / Baubinas, R. / Matukas, J. / Palenskis, V. / Radamson, H. H.

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Document information

Title:

Application of selective epitaxy for formation of ultra shallow SiGe-based junctions

Contributors:

Hallstedt, J. (author) / Isheden, C. (author) / Ostling, M. (author) / Baubinas, R. (author) / Matukas, J. (author) / Palenskis, V. (author) / Radamson, H. H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 180-183

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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