Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

    New search for: Florakis, A.
    New search for: Misra, N.
    New search for: Grigoropoulos, C.
    New search for: Giannakopoulos, K.
    New search for: Halimaoui, A.
    New search for: Tsoukalas, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

    New search for: Florakis, A.
    New search for: Misra, N.
    New search for: Grigoropoulos, C.
    New search for: Giannakopoulos, K.
    New search for: Halimaoui, A.
    New search for: Tsoukalas, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

    New search for: Florakis, A.
    New search for: Misra, N.
    New search for: Grigoropoulos, C.
    New search for: Giannakopoulos, K.
    New search for: Halimaoui, A.
    New search for: Tsoukalas, D.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Non-melt laser annealing of Plasma Implanted Boron for ultra shallow junctions in Silicon

    Contributors:

    Florakis, A. (author) / Misra, N. (author) / Grigoropoulos, C. (author) / Giannakopoulos, K. (author) / Halimaoui, A. (author) / Tsoukalas, D. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 39-42

    Publication date:

    2008-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Simulations of arsenic and boron co-implanted in silicon during RTA for ultra-shallow junctions realizations

    Merabet, A. | British Library Online Contents | 2005

    Ultra-shallow junctions produced by plasma doping and flash lamp annealing

    Skorupa, W. / Yankov, R. A. / Anwand, W. et al. | British Library Online Contents | 2004

    Clustering of ultra-low-energy implanted boron in silicon during activation annealing

    Schroer, E. / Privitera, V. / Priolo, F. et al. | British Library Online Contents | 2000

    Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

    Chan, T. K. / Koh, S. Y. / Fang, V. et al. | British Library Online Contents | 2014

    Loss of implanted heavy elements during annealing of ultra-shallow ion-implanted silicon: The complete picture

    Chan, T.K. / Koh, S.Y. / Fang, V. et al. | British Library Online Contents | 2014

    Back to top