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Dopant diffusion control by adding carbon into Si and SiGe: principles and device application

Osten, H. J. / Knoll, D. / Rucker, H.

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Dopant diffusion control by adding carbon into Si and SiGe: principles and device application

Osten, H. J. / Knoll, D. / Rucker, H.

Dopant diffusion control by adding carbon into Si and SiGe: principles and device application

Osten, H. J. / Knoll, D. / Rucker, H.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Dopant diffusion control by adding carbon into Si and SiGe: principles and device application

Contributors:

Osten, H. J. (author) / Knoll, D. (author) / Rucker, H. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 87 ; 262 - 270

Publication date:

2001-01-01

Size:

9 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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