Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs: Fid-Bau Portal

Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

Takagi, S. / Sugiyama, N. / Mizuno, T. / Tezuka, T. / Kurobe, A.

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Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

Takagi, S. / Sugiyama, N. / Mizuno, T. / Tezuka, T. / Kurobe, A.

Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

Takagi, S. / Sugiyama, N. / Mizuno, T. / Tezuka, T. / Kurobe, A.

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Check availability in my library

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Document information

Title:

Device structure and electrical characteristics of strained-Si-on-insulator (strained-SOI) MOSFETs

Contributors:

Takagi, S. (author) / Sugiyama, N. (author) / Mizuno, T. (author) / Tezuka, T. (author) / Kurobe, A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 426 - 434

Publication date:

2002-01-01

Size:

9 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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