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High-performance (110)-surface strained-SOI MOSFETs

Mizuno, T. / Sugiyama, N. / Tezuka, T. / Moriyama, Y. / Nakaharai, S. / Maeda, T. / Takagi, S.

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High-performance (110)-surface strained-SOI MOSFETs

Mizuno, T. / Sugiyama, N. / Tezuka, T. / Moriyama, Y. / Nakaharai, S. / Maeda, T. / Takagi, S.

High-performance (110)-surface strained-SOI MOSFETs

Mizuno, T. / Sugiyama, N. / Tezuka, T. / Moriyama, Y. / Nakaharai, S. / Maeda, T. / Takagi, S.

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Document information

Title:

High-performance (110)-surface strained-SOI MOSFETs

Contributors:

Mizuno, T. (author) / Sugiyama, N. (author) / Tezuka, T. (author) / Moriyama, Y. (author) / Nakaharai, S. (author) / Maeda, T. (author) / Takagi, S. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 327-336

Publication date:

2005-01-01

Size:

10 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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