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Radiation damage in proton-irradiated strained Si n-MOSFETs

Hayama, K. / Takakura, K. / Ohtani, T. / Kudou, T. / Ohyama, H. / Mercha, A. / Simoen, E. / Claeys, C.

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Radiation damage in proton-irradiated strained Si n-MOSFETs

Hayama, K. / Takakura, K. / Ohtani, T. / Kudou, T. / Ohyama, H. / Mercha, A. / Simoen, E. / Claeys, C.

Radiation damage in proton-irradiated strained Si n-MOSFETs

Hayama, K. / Takakura, K. / Ohtani, T. / Kudou, T. / Ohyama, H. / Mercha, A. / Simoen, E. / Claeys, C.

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Title:

Radiation damage in proton-irradiated strained Si n-MOSFETs

Contributors:

Hayama, K. (author) / Takakura, K. (author) / Ohtani, T. (author) / Kudou, T. (author) / Ohyama, H. (author) / Mercha, A. (author) / Simoen, E. (author) / Claeys, C. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 11 ; 314-318

Publication date:

2008-01-01

Size:

5 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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