Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs: Fid-Bau Portal

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Prest, M. J. / Palmer, M. J. / Grasby, T. J. / Phillips, P. J. / Mironov, O. A. / Parker, E. H. / Whall, T. E. / Waite, A. M. / Evans, A. G. / Watling, J. R.

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Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Prest, M. J. / Palmer, M. J. / Grasby, T. J. / Phillips, P. J. / Mironov, O. A. / Parker, E. H. / Whall, T. E. / Waite, A. M. / Evans, A. G. / Watling, J. R.

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Prest, M. J. / Palmer, M. J. / Grasby, T. J. / Phillips, P. J. / Mironov, O. A. / Parker, E. H. / Whall, T. E. / Waite, A. M. / Evans, A. G. / Watling, J. R.

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Title:

Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Contributors:

Prest, M. J. (author) / Palmer, M. J. (author) / Grasby, T. J. (author) / Phillips, P. J. (author) / Mironov, O. A. (author) / Parker, E. H. (author) / Whall, T. E. (author) / Waite, A. M. (author) / Evans, A. G. (author) / Watling, J. R. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 89 ; 444 - 448

Publication date:

2002-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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