Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs: Fid-Bau Portal

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

Choi, S. S. / Choi, A. R. / Yang, J. W. / Hwang, Y. W. / Cho, D. H. / Shim, K. H.

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Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

Choi, S. S. / Choi, A. R. / Yang, J. W. / Hwang, Y. W. / Cho, D. H. / Shim, K. H.

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

Choi, S. S. / Choi, A. R. / Yang, J. W. / Hwang, Y. W. / Cho, D. H. / Shim, K. H.

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Document information

Title:

Comparative study of low frequency noise and hot-carrier reliability in SiGe PD SOI pMOSFETs

Contributors:

Choi, S. S. (author) / Choi, A. R. (author) / Yang, J. W. (author) / Hwang, Y. W. (author) / Cho, D. H. (author) / Shim, K. H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6190-6193

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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