The switch of the worst case on NBTI and hot-carrier reliability for 0.13mm pMOSFETs: Fid-Bau Portal

The switch of the worst case on NBTI and hot-carrier reliability for 0.13mm pMOSFETs

Tu, C. H. / Chen, S. Y. / Lin, M. H. / Wang, M. C. / Wu, S. H. / chou, S. / Ko, J. / Huang, H. S.

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The switch of the worst case on NBTI and hot-carrier reliability for 0.13mm pMOSFETs

Tu, C. H. / Chen, S. Y. / Lin, M. H. / Wang, M. C. / Wu, S. H. / chou, S. / Ko, J. / Huang, H. S.

The switch of the worst case on NBTI and hot-carrier reliability for 0.13mm pMOSFETs

Tu, C. H. / Chen, S. Y. / Lin, M. H. / Wang, M. C. / Wu, S. H. / chou, S. / Ko, J. / Huang, H. S.

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Title:

The switch of the worst case on NBTI and hot-carrier reliability for 0.13mm pMOSFETs

Contributors:

Tu, C. H. (author) / Chen, S. Y. (author) / Lin, M. H. (author) / Wang, M. C. (author) / Wu, S. H. (author) / chou, S. (author) / Ko, J. (author) / Huang, H. S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 254 ; 6186-6189

Publication date:

2008-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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