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Characterization of GaN films etched using reactive ion etching technique by secondary ion mass spectrometry

Naoi, Y. / Kawakami, Y. / Nakanishi, T. / Lacroix, Y. / Shintani, Y. / Sakai, S.

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Characterization of GaN films etched using reactive ion etching technique by secondary ion mass spectrometry

Naoi, Y. / Kawakami, Y. / Nakanishi, T. / Lacroix, Y. / Shintani, Y. / Sakai, S.

Characterization of GaN films etched using reactive ion etching technique by secondary ion mass spectrometry

Naoi, Y. / Kawakami, Y. / Nakanishi, T. / Lacroix, Y. / Shintani, Y. / Sakai, S.

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Check availability in my library

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Document information

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Document information

Title:

Characterization of GaN films etched using reactive ion etching technique by secondary ion mass spectrometry

Contributors:

Naoi, Y. (author) / Kawakami, Y. (author) / Nakanishi, T. (author) / Lacroix, Y. (author) / Shintani, Y. (author) / Sakai, S. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 4 ; 555-558

Publication date:

2001-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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