Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes: Fid-Bau Portal

Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes

Horsfall, A. B. / Vassilevski, K. V. / Johnson, C. M. / Wright, N. G. / O Neill, A. G. / Gwilliam, R. M.

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Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes

Horsfall, A. B. / Vassilevski, K. V. / Johnson, C. M. / Wright, N. G. / O Neill, A. G. / Gwilliam, R. M.

Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes

Horsfall, A. B. / Vassilevski, K. V. / Johnson, C. M. / Wright, N. G. / O Neill, A. G. / Gwilliam, R. M.

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Title:

Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes

Contributors:

Horsfall, A. B. (author) / Vassilevski, K. V. (author) / Johnson, C. M. (author) / Wright, N. G. (author) / O Neill, A. G. (author) / Gwilliam, R. M. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1149-1152

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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