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    Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

    New search for: Domeij, M.
    New search for: Brunahl, H.
    New search for: Ostling, M.

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    Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

    New search for: Domeij, M.
    New search for: Brunahl, H.
    New search for: Ostling, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

    New search for: Domeij, M.
    New search for: Brunahl, H.
    New search for: Ostling, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects

    Contributors:

    Domeij, M. (author) / Brunahl, H. (author) / Ostling, M. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 389/393 ; 1277-1280

    Publication date:

    2002-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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