High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation

Negoro, Y. / Miyamoto, N. / Kimoto, T. et al. | British Library Online Contents | 2002

Avalanche Multiplication and Breakdown in 4H-SiC Diodes

Ng, B. K. / David, J. P. R. / Massey, D. J. et al. | British Library Online Contents | 2004

Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes

Aboujja, S. / Carlone, C. / Houdayer, A. et al. | British Library Online Contents | 2000

High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

Vassilevski, K. V. / Nikitina, I. P. / Bhatnagar, P. et al. | British Library Online Contents | 2006

Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes

Wahab, Q. / Ellison, A. / Hallin, C. et al. | British Library Online Contents | 2000