Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors: Fid-Bau Portal

Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors

Wang, R. / Bhat, I. B. / Chow, T. P.

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Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors

Wang, R. / Bhat, I. B. / Chow, T. P.

Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors

Wang, R. / Bhat, I. B. / Chow, T. P.

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Document information

Title:

Chemical Vapor Deposition of n-Type SiC Epitaxial Layers Using Phosphine and Nitrogen as the Precursors

Contributors:

Wang, R. (author) / Bhat, I. B. (author) / Chow, T. P. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 145-148

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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