Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor: Fid-Bau Portal

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Hasegawa, M. / Miyauchi, A. / Masahara, K. / Ishida, Y. / Takahashi, T. / Ohno, T. / Nishio, J. / Suzuki, T. / Tanaka, T. / Yoshida, S.

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Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Hasegawa, M. / Miyauchi, A. / Masahara, K. / Ishida, Y. / Takahashi, T. / Ohno, T. / Nishio, J. / Suzuki, T. / Tanaka, T. / Yoshida, S.

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Hasegawa, M. / Miyauchi, A. / Masahara, K. / Ishida, Y. / Takahashi, T. / Ohno, T. / Nishio, J. / Suzuki, T. / Tanaka, T. / Yoshida, S.

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Document information

Title:

Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Contributors:

Hasegawa, M. (author) / Miyauchi, A. (author) / Masahara, K. (author) / Ishida, Y. (author) / Takahashi, T. (author) / Ohno, T. (author) / Nishio, J. (author) / Suzuki, T. (author) / Tanaka, T. (author) / Yoshida, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 227-230

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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