Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD Reactor

Hasegawa, M. / Miyauchi, A. / Masahara, K. et al. | British Library Online Contents | 2002

Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition

Fujiwara, H. / Danno, K. / Kimoto, T. et al. | British Library Online Contents | 2004

Growth of High Quality AlN Epitaxial Films by Hot-Wall Chemical Vapour Deposition

Forsberg, U. / Birch, J. / MacMillan, M. F. et al. | British Library Online Contents | 1998

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

Rupp, R. / Wiedenhofer, A. / Friedrichs, P. et al. | British Library Online Contents | 1998

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Masahara, K. / Takahashi, T. / Kushibe, M. et al. | British Library Online Contents | 2002