High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor: Fid-Bau Portal

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Masahara, K. / Takahashi, T. / Kushibe, M. / Ohno, T. / Nishio, J. / Kojima, K. / Ishida, Y. / Suzuki, T. / Tanaka, T. / Yoshida, S.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Masahara, K. / Takahashi, T. / Kushibe, M. / Ohno, T. / Nishio, J. / Kojima, K. / Ishida, Y. / Suzuki, T. / Tanaka, T. / Yoshida, S.

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Masahara, K. / Takahashi, T. / Kushibe, M. / Ohno, T. / Nishio, J. / Kojima, K. / Ishida, Y. / Suzuki, T. / Tanaka, T. / Yoshida, S.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD Reactor

Contributors:

Masahara, K. (author) / Takahashi, T. (author) / Kushibe, M. (author) / Ohno, T. (author) / Nishio, J. (author) / Kojima, K. (author) / Ishida, Y. (author) / Suzuki, T. (author) / Tanaka, T. (author) / Yoshida, S. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 179-182

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Hasegawa, M. / Miyauchi, A. / Masahara, K. et al. | British Library Online Contents | 2002

Growth of SiC Epitaxial Layers in a Vertical Cold Wall Reactor Suited for High Voltage Applications

Rupp, R. / Wiedenhofer, A. / Friedrichs, P. et al. | British Library Online Contents | 1998

High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD

Myers, R. L. / Shishkin, Y. / Kordina, O. et al. | British Library Online Contents | 2006

Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD

Fujihira, K. / Kimoto, T. / Matsunami, H. | British Library Online Contents | 2003

Epitaxial Growth of 4H-SiC in a Vertical Hot-Wall CVD Reactor: Comparison between Up- and Down-Flow Orientations

Zhang, J. / Ellison, A. / Danielsson, O. et al. | British Library Online Contents | 2001