A platform for research: civil engineering, architecture and urbanism
Cone Structure Formation by Preferred Growth of Random Nuclei in Chemical Vapor Deposited Epitaxial Silicon Films
Cone Structure Formation by Preferred Growth of Random Nuclei in Chemical Vapor Deposited Epitaxial Silicon Films
Cone Structure Formation by Preferred Growth of Random Nuclei in Chemical Vapor Deposited Epitaxial Silicon Films
Noda, S. (author) / Kajikawa, Y. (author) / Komiyama, H. (author)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 14 ; 87-89
2002-01-01
3 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Preferred Orientation of Chemical Vapor Deposited Polycrystalline Silicon Carbide Films
British Library Online Contents | 2002
|Electrical Characteristics of Plasma-Enhanced Chemical Vapor Deposited Silicon Carbide Thin Films
British Library Online Contents | 2003
|Preferred growth of epitaxial TiN thin film on silicon substrate by pulsed laser deposition
British Library Online Contents | 1998
|Low temperature epitaxial silicon films deposited by ion-assisted deposition
British Library Online Contents | 2002
|