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    Cone Structure Formation by Preferred Growth of Random Nuclei in Chemical Vapor Deposited Epitaxial Silicon Films

    New search for: Noda, S.
    New search for: Kajikawa, Y.
    New search for: Komiyama, H.

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    Cone Structure Formation by Preferred Growth of Random Nuclei in Chemical Vapor Deposited Epitaxial Silicon Films

    New search for: Noda, S.
    New search for: Kajikawa, Y.
    New search for: Komiyama, H.

    Access

    Access via TIB
    Check availability in my library
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    Cone Structure Formation by Preferred Growth of Random Nuclei in Chemical Vapor Deposited Epitaxial Silicon Films

    New search for: Noda, S.
    New search for: Kajikawa, Y.
    New search for: Komiyama, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Cone Structure Formation by Preferred Growth of Random Nuclei in Chemical Vapor Deposited Epitaxial Silicon Films

    Contributors:

    Noda, S. (author) / Kajikawa, Y. (author) / Komiyama, H. (author)

    Published in:

    ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 14 ; 87-89

    Publication date:

    2002-01-01

    Size:

    3 pages

    ISSN:

    0935-9648

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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