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Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures
Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures
Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures
Sedky, S. (Autor:in) / Witvrouw, A. (Autor:in) / Caymax, M. (Autor:in) / Saerens, A. (Autor:in) / Van Houtte, P. (Autor:in)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 17 ; 1580-1586
01.01.2002
7 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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