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High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma
High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma
High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma
Khan, F. A. (author) / Zhou, L. (author) / Kumar, V. (author) / Adesida, I. (author) / Okojie, R. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 95 ; 51 - 54
2002-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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