High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas: Fid-Bau Portal

High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas

Sung, Y. J. / Kim, H. S. / Lee, Y. H. / Lee, J. W. / Chae, S. H. / Park, Y. J. / Yeom, G. Y.

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High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas

Sung, Y. J. / Kim, H. S. / Lee, Y. H. / Lee, J. W. / Chae, S. H. / Park, Y. J. / Yeom, G. Y.

High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas

Sung, Y. J. / Kim, H. S. / Lee, Y. H. / Lee, J. W. / Chae, S. H. / Park, Y. J. / Yeom, G. Y.

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Document information

Title:

High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas

Contributors:

Sung, Y. J. (author) / Kim, H. S. (author) / Lee, Y. H. (author) / Lee, J. W. (author) / Chae, S. H. (author) / Park, Y. J. (author) / Yeom, G. Y. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 82 ; 50 - 52

Publication date:

2001-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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