High rate etching of sapphire wafer using Cl2/BCl3/Ar inductively coupled plasmas

Sung, Y. J. / Kim, H. S. / Lee, Y. H. et al. | British Library Online Contents | 2001

Comparison of planar inductively coupled plasma etching of GaAs in BCl3, BCl3/Ar, and BCl3/Ne

Lee, J. W. / Lim, Y. T. / Baek, I. K. et al. | British Library Online Contents | 2004

High rate etching of AlN using BCl3/Cl2/Ar inductively coupled plasma

Khan, F. A. / Zhou, L. / Kumar, V. et al. | British Library Online Contents | 2002

BCl3/Ne etching of III-V semiconductors in a planar inductively coupled plasma reactor

Lim, W. T. / Baek, I. K. / Lee, J. W. et al. | British Library Online Contents | 2004

Characteristics of Ir etching using Ar/Cl2 inductively coupled plasmas

PARK, S. G. / KIM, C. W. / SONG, H. Y. et al. | British Library Online Contents | 2005