Ion implantation induced defects in epitaxial 4H-SiC

Hallen, A. / Henry, A. / Pellegrino, P. et al. | British Library Online Contents | 1999

Nitrogen passivation by implantation-induced point defects in 4H-SiC epitaxial layers

Aberg, D. / Hallen, A. / Pellegrino, P. et al. | British Library Online Contents | 2001

Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes

Wahab, Q. / Ellison, A. / Hallin, C. et al. | British Library Online Contents | 2000

Thermal evolution of vacancy defects induced in sintered UO2 disks by helium implantation

Labrim, H. / Barthe, M. F. / Desgardin, P. et al. | British Library Online Contents | 2006

Slow Positron Beam Investigations of Defects Caused by B^+ Implantation into Epitaxial 6H-SiC

Anwand, W. / Brauer, G. / Kuriplach, J. et al. | British Library Online Contents | 2004