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    SIMS study of depth profiles of delta-doped boron/silicon alternating layers by low-energy ion beams

    New search for: Hayashi, S.
    New search for: Takano, A.
    New search for: Takenaka, H.
    New search for: Homma, Y.

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    SIMS study of depth profiles of delta-doped boron/silicon alternating layers by low-energy ion beams

    New search for: Hayashi, S.
    New search for: Takano, A.
    New search for: Takenaka, H.
    New search for: Homma, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    SIMS study of depth profiles of delta-doped boron/silicon alternating layers by low-energy ion beams

    New search for: Hayashi, S.
    New search for: Takano, A.
    New search for: Takenaka, H.
    New search for: Homma, Y.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    SIMS study of depth profiles of delta-doped boron/silicon alternating layers by low-energy ion beams

    Contributors:

    Hayashi, S. (author) / Takano, A. (author) / Takenaka, H. (author) / Homma, Y. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 203-204 ; 298-301

    Publication date:

    2003-01-01

    Size:

    4 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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