Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer: Fid-Bau Portal

Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer

Noh, J. / Sakuraba, M. / Murota, J. / Zaima, S. / Yasuda, Y.

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Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer

Noh, J. / Sakuraba, M. / Murota, J. / Zaima, S. / Yasuda, Y.

Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer

Noh, J. / Sakuraba, M. / Murota, J. / Zaima, S. / Yasuda, Y.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Contact resistivity between tungsten and impurity (P and B)-doped Si1-x-yGexCy epitaxial layer

Contributors:

Noh, J. (author) / Sakuraba, M. (author) / Murota, J. (author) / Zaima, S. (author) / Yasuda, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 212-213 ; 679-683

Publication date:

2003-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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