Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor

    New search for: Jacob, A. P.
    New search for: Myrberg, T.
    New search for: Friesel, M.
    New search for: Nur, O.
    New search for: Willander, M.
    New search for: Serincan, U.
    New search for: Turan, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor

    New search for: Jacob, A. P.
    New search for: Myrberg, T.
    New search for: Friesel, M.
    New search for: Nur, O.
    New search for: Willander, M.
    New search for: Serincan, U.
    New search for: Turan, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor

    New search for: Jacob, A. P.
    New search for: Myrberg, T.
    New search for: Friesel, M.
    New search for: Nur, O.
    New search for: Willander, M.
    New search for: Serincan, U.
    New search for: Turan, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Ultrathin oxynitridation process through ion implantation in a poly Si1-xGex gate MOS capacitor

    Contributors:

    Jacob, A. P. (author) / Myrberg, T. (author) / Friesel, M. (author) / Nur, O. (author) / Willander, M. (author) / Serincan, U. (author) / Turan, R. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 37-41

    Publication date:

    2003-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Conditions for Gaseous Nitridation and Oxynitridation of Crystalline Silicon Powders

    Ming, L. / Yin, C.-q. / Wei, X.-q. et al. | British Library Online Contents | 2010

    X-ray photoelectron study in the initial stage of oxynitridation process by excited nitrogen and oxygen

    Saito, Y. / Iguchi, S. | British Library Online Contents | 1998

    Electronic promotion of silicon oxynitridation at room temperature by alkali-metal catalysts

    Glachant, A. / Soukiassian, P. / Kim, S. T. et al. | British Library Online Contents | 1993

    Photon- and catalysis-assisted silicon oxynitridation at room temperature: a comparative study

    Glachant, A. / Soukiassian, P. | British Library Online Contents | 1993

    H+ implantation-enhanced stress relaxation in c-Si1-xGex on SiO2 during oxidation-induced Ge condensation process

    Sadoh, T. / Matsuura, R. / Ninomiya, M. et al. | British Library Online Contents | 2005

    Back to top