Low-temperature metalorganic chemical vapor deposition of Al~2O~3 for advanced complementary metal-oxide semiconductor gate dielectric applications: Fid-Bau Portal

Low-temperature metalorganic chemical vapor deposition of Al~2O~3 for advanced complementary metal-oxide semiconductor gate dielectric applications

Skordas, S. / Papadatos, F. / Nuesca, G. / Sullivan, J. J. / Eisenbraun, E. T. / Kaloyeros, A. E.

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Low-temperature metalorganic chemical vapor deposition of Al~2O~3 for advanced complementary metal-oxide semiconductor gate dielectric applications

Skordas, S. / Papadatos, F. / Nuesca, G. / Sullivan, J. J. / Eisenbraun, E. T. / Kaloyeros, A. E.

Low-temperature metalorganic chemical vapor deposition of Al~2O~3 for advanced complementary metal-oxide semiconductor gate dielectric applications

Skordas, S. / Papadatos, F. / Nuesca, G. / Sullivan, J. J. / Eisenbraun, E. T. / Kaloyeros, A. E.

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Document information

Title:

Low-temperature metalorganic chemical vapor deposition of Al~2O~3 for advanced complementary metal-oxide semiconductor gate dielectric applications

Contributors:

Skordas, S. (author) / Papadatos, F. (author) / Nuesca, G. (author) / Sullivan, J. J. (author) / Eisenbraun, E. T. (author) / Kaloyeros, A. E. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 18 ; 1868-1876

Publication date:

2003-01-01

Size:

9 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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