Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

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Homoepitaxial Growth of 4H-SiC on Trenched Substrates by Chemical Vapor Deposition

Chen, Y. / Kimoto, T. / Takeuchi, Y. et al. | British Library Online Contents | 2004

Homoepitaxial diamond chemical vapor deposition for ultra-light doping

Teraji, T. / Isoya, J. / Watanabe, K. et al. | British Library Online Contents | 2017

Homoepitaxial (111) diamond grown by temperature-controlled chemical vapor deposition

Nishitani-Gamo, M. / Sakaguchi, I. / Takami, T. et al. | British Library Online Contents | 1999

3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction Characteristics

Ishida, Y. / Kushibe, M. / Takahashi, T. et al. | British Library Online Contents | 2002