Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition: Fid-Bau Portal

Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Pons, M. / Meziere, J. / Kuan, S. W. T. / Blanquet, E. / Ferret, P. / Di Cioccio, L. / Billon, T. / Madar, R.

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Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Pons, M. / Meziere, J. / Kuan, S. W. T. / Blanquet, E. / Ferret, P. / Di Cioccio, L. / Billon, T. / Madar, R.

Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Pons, M. / Meziere, J. / Kuan, S. W. T. / Blanquet, E. / Ferret, P. / Di Cioccio, L. / Billon, T. / Madar, R.

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Title:

Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor Deposition

Contributors:

Pons, M. (author) / Meziere, J. (author) / Kuan, S. W. T. (author) / Blanquet, E. (author) / Ferret, P. (author) / Di Cioccio, L. (author) / Billon, T. (author) / Madar, R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 223-226

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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