A platform for research: civil engineering, architecture and urbanism
Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
Investigation of surface recombination and carrier lifetime in 4H/6H-SiC
Galeckas, A. (author) / Linnros, J. (author) / Frischholz, M. (author) / Rottner, K. (author) / Nordell, N. (author) / Karlsson, S. (author) / Grivickas, V. (author)
MATERIALS SCIENCE AND ENGINEERING -LAUSANNE- B ; 61-62 ; 239 - 243
1999-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers
British Library Online Contents | 2013
|Wafer Level Recombination Carrier Lifetime Measurements of 4H-SiC PiN Epitaxial Wafers
British Library Online Contents | 2009
|Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes
British Library Online Contents | 2010
|British Library Online Contents | 2003
|Investigation of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Diodes
British Library Online Contents | 2007
|