N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C: Fid-Bau Portal

N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

Meunier-Beillard, P. / Caymax, M. / Van Nieuwenhuysen, K. / Doumen, G. / Brijs, B. / Hopstaken, M. / Geenen, L. / Vandervorst, W.

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N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

Meunier-Beillard, P. / Caymax, M. / Van Nieuwenhuysen, K. / Doumen, G. / Brijs, B. / Hopstaken, M. / Geenen, L. / Vandervorst, W.

N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

Meunier-Beillard, P. / Caymax, M. / Van Nieuwenhuysen, K. / Doumen, G. / Brijs, B. / Hopstaken, M. / Geenen, L. / Vandervorst, W.

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Title:

N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

Contributors:

Meunier-Beillard, P. (author) / Caymax, M. (author) / Van Nieuwenhuysen, K. (author) / Doumen, G. (author) / Brijs, B. (author) / Hopstaken, M. (author) / Geenen, L. (author) / Vandervorst, W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 31-35

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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